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FM2G75US60
September 2000
IGBT
FM2G75US60
Molding Type Module
General Description
Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It's designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is required.
Features
* * * * * Short Circuit rated 10us @ TC = 100C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 75A High Input Impedance Fast & Soft Anti-Parallel FWD
Package Code : 7PM-AA
Application
* * * * * AC & DC Motor Controls General Purpose Inverters Robotics Servo Controls UPS
E1/C2
C1
E2
G1
E1
G2
E2
Internal Circuit Diagram
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM TSC PD TJ Tstg Viso Mounting Torque
TC = 25C unless otherwise noted
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Curent Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Isolation Voltage Power Terminals Screw : M5 Mounting Screw : M5
@ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C
@ AC 1minute
FM2G75US60 600 20 75 150 75 150 10 310 -40 to +150 -40 to +125 2500 2.0 2.0
Units V V A A A A us W C C V N.m N.m
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
(c)2000 Fairchild Semiconductor International
FM2G75US60 Rev. A
FM2G75US60
Electrical Characteristics of IGBT T
Symbol Parameter
C
= 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 0V, IC = 75mA IC = 75A, VGE = 15V 5.0 --2.2 8.5 2.8 V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---7056 672 180 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge --------------10 ---24 41 120 87 2.4 1.8 4.2 27 43 175 124 2.6 2.7 5.3 -310 62 130 --150 200 -----------350 --ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ us nC nC nC
VCC = 300 V, IC = 75A, RG = 3.3, VGE = 15V Inductive Load, TC = 25C
VCC = 300 V, IC = 75A, RG = 3.3, VGE = 15V Inductive Load, TC = 125C
@ TC =
VCC = 300 V, VGE = 15V 100C
VCE = 300 V, IC = 75A, VGE = 15V
(c)2000 Fairchild Semiconductor International
FM2G75US60 Rev. A
FM2G75US60
Electrical Characteristics of DIODE T
Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge
C
= 25C unless otherwise noted
Test Conditions TC = 25C IF = 75A TC = 100C TC = 25C TC = 100C IF = 75A di / dt = 150 A/us TC = 25C TC = 100C TC = 25C TC = 100C
Min. ---------
Typ. 1.9 1.8 90 130 7 10 315 650
Max. 2.8 -130 -9 -590 --
Units V ns A nC
Thermal Characteristics
Symbol RJC RJC RCS Weight Parameter Junction-to-Case (IGBT Part, per 1/2 Module) Junction-to-Case (DIODE Part, per 1/2 Module) Case-to-Sink (Conductive grease applied) Weight of Module Typ. --0.05 -Max. 0.4 0.9 -190 Units C/W C/W C/W g
(c)2000 Fairchild Semiconductor International
FM2G75US60 Rev. A
FM2G75US60
200 180 160 Common Emitter TC = 25 20V 15V 12V
200 Common Emitter V GE = 15V T C = 25 T C = 125
Collector Current, I C [A]
140 120 100 80 60 40 20 0 0 2 4 6 8 Vge = 10V
Collector Current, I C [A]
160
120
80
40
0 0.3 1 10 20
Collector - Emitter Voltage, VCE [V]
Collector - Emitter Voltage, V CE [V]
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage Characteristics
5
100 Common Emitter V GE = 15V
Collector - Emitter Voltage, V CE [V]
V CC = 300V Load Current : peak of square wave
4 150A 3
80
Load Current [A]
60
75A 2 IC = 40A 1
40
20 Duty cycle : 50% Tc = 100 Power Dissipation = 100W 0.1 1 10 100 1000
0 0 30 60 90 120 150
0
Case Temperature, Tc []
Frequency [Khz]
Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20 Common Emitter TC = 25
20 Common Emitter TC = 125
Collector - Emitter Voltage, V CE [V]
16
Collector - Emitter Voltage, V CE [V]
16
12
12
8
8 150A 4 Ic = 40A 0 75A
150A 4 Ic = 40A 0 0 4 8 12 16 20 75A
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. VGE
(c)2000 Fairchild Semiconductor International
Fig 6. Saturation Voltage vs. VGE
FM2G75US60 Rev. A
FM2G75US60
16000 14000 12000
Common Emitter V GE = 0V, f = 1MHz T C = 25 Cies
1000 Common Emitter V CC = 300V, VGE = 15V IC = 75A T C = 25 T C = 125
Ton
Capacitance [pF]
10000 8000 6000 Coes 4000 Cres 2000 0 1 10
Switching Time [ns]
100
Tr
10 1 10 100
Collector - Emitter Voltage, V CE [V]
Gate Resistance, R G []
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
20000 Common Emitter V CC = 300V, VGE = 15V IC = 75A T C = 25 T C = 125 Common Emitter VCC = 300V, V GE = 15V IC = 75A TC = 25 TC = 125
10000
Switching Time [ns]
1000
Eon
Switching Loss [uJ]
Toff
Eoff
100
Tf
1000 10 100 1 10 100
Gate Resistance, RG [ ]
Gate Resistance, Rg [ ]
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
300 Common Emitter V CC = 300V, V GE = 15V RG = 3.3 T C = 25 T C = 125 Ton
1000 Common Emitter V CC = 300V, V GE = 15V RG = 3.3 T C = 25 T C = 125
Switching Time [ns]
100
Switching Time [ns]
Toff
Tr
100
Tf
10 20 30 40 50 60 70 75 20 30 40 50 60 70 75
Collector Current, IC [A]
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs. Collector Current
(c)2000 Fairchild Semiconductor International
Fig 12. Turn-Off Characteristics vs. Collector Current
FM2G75US60 Rev. A
FM2G75US60
10000 Common Emitter V CC = 300V, V GE = 15V RG = 3.3 T C = 25 T C = 125
15 Common Emitter RL = 4 T C = 25
Gate - Emitter Voltage, V GE [ V ]
12
300 V
Switching Loss [uJ]
Eoff 1000 Eoff Eon
9 200 V 6 V CC = 100 V
Eon
3
100 20 30 40 50 60 70 75
0 0 50 100 150 200 250 300 350
Collector Current, IC [A]
Gate Charge, Qg [ nC ]
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
500 IC MAX. (Pulsed) 100 IC MAX. (Continuous) 100us 1 50us 100
Collector Current, I C [A]
10
DC Operation
Collector Current, I C [A]
10
1
Single Nonrepetitive Pulse TC = 25 Curves must be derated linerarly with increase in temperature 0.3 1 10 100 1000
Safe Operating Area V GE = 20V, TC = 100 C 1 1 10 100 1000
o
0.1
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, V CE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
500 1 100
Thermal Response, Zthjc [/W]
Collector Current, I C [A]
0.1
10
1 Single Nonrepetitive Pulse TJ 125 V GE = 15V RG = 3.3 0 100 200 300 400 500 600 700
0.01
T C = 25 IGBT : DIODE : 1E-3 10
-5
0.1
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Collector-Emitter Voltage, VCE [V]
Rectangular Pulse Duration [sec]
Fig 17. RBSOA Characteristics
(c)2000 Fairchild Semiconductor International
Fig 18. Transient Thermal Impedance
FM2G75US60 Rev. A
FM2G75US60
200
20
160
Peak Reverse Recovery Current I rr [A] Reverse Recovery Time Trr [x10ns]
Common Cathode VGE = 0V TC = 25 TC = 125
Forward Current, I F [A]
10
T rr Irr
120
80
5
40
Common Cathode di/dt = 150A/ T C = 25 T C = 100 2 0 10 20 30 40 50 60 70 80
0 0 1 2 3 4
Forward Voltage, V F [V]
Forward Current, IF [A]
Fig 19. Forward Characteristics
Fig 20. Reverse Recovery Characteristics
(c)2000 Fairchild Semiconductor International
FM2G75US60 Rev. A
FM2G75US60
Package Dimension
30$$ )6 3.* &2'( %'
C2E1
C1
E2
12
17 4
4 34
G2
E2
E1 G1
23 800.1 93
23 2-5.4 Mounting Hole 3-M5 DP8.5 6.5
16
7
16
7
16
TAP Terminal -110(t0.5)
23.5
23
Max. 31.0
Dimensions in Millimeters
(c)2000 Fairchild Semiconductor International
FM2G75US60 Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R)
DISCLAIMER
FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM POPTM PowerTrench(R)
QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM
VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2000 Fairchild Semiconductor International
Rev. F1

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